Infineon IGBT, 80A Maximum Continuous Collector Current, 600V Maximum Collector Emitter Voltage - IKW75N60TFKSA1
This IGBT is a high-performance semiconductor component designed for power electronics applications. With a maximum continuous collector current of 80A, it operates efficiently in high-voltage environments, rated for 600V. The device is packaged in a TO-247 format, ideal for through-hole mounting.
Features & Benefits
• Low collector-emitter saturation voltage enhances efficiency • High switching speed reduces energy loss during operation • Positive temperature coefficient ensures stable performance • Compatible with a wide temperature range from -40°C to +175°C
Applications
• Suitable for use in frequency converters in industrial settings • Ideal for uninterruptible power supply systems • Utilised in motor control for automation • Effective for renewable energy systems to ensure efficiency
What are the implications of short circuit withstand time for my application?
The short circuit withstand time of 5μs allows for reliable protection in applications that may encounter fault conditions, ensuring that the device can endure brief overcurrent situations without immediate failure.
How does the high switching speed impact system efficiency?
A high switching speed of 20kHz minimises energy losses during transitions, significantly improving overall system efficiency and performance, particularly in fast-response applications.
What are the thermal management considerations for optimal performance?
Thermal resistance values indicate effective heat dissipation from junction to case
managing junction temperatures within specified limits is crucial to maintain reliable operation and extend component lifespan.
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IGBT 分立件和模块，Infineon
绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。
