This is a 512Mb Low Power DDR SDRAM organized as 4M words x 4 banks x 16bits.
Burst Type: Sequential or Interleave
Standard Self Refresh Mode
PASR, ATCSR, Power Down Mode、DPD
Programmable output buffer driver strength
Four internal banks for concurrent operation
Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver
属性 | 数值 |
---|---|
存储器大小 | 512Mbit |
SDRAM类 | LPDDR |
组织 | 64M x 8 bit |
数据速率 | 200MHz |
数据总线宽度 | 16Bit |
位址总线宽 | 15Bit |
每字组的位元数目 | 8Bit |
最长随机存取时间 | 5ns |
字组数目 | 64M |
安装类型 | 贴片 |
封装类型 | VFBGA |
引脚数目 | 60 |
尺寸 | 9.1 x 8.1 x 0.65mm |
高度 | 0.65mm |
长度 | 9.1mm |